1/5 byv255v ? may 2000 - ed : 2e high efficiency fast recovery rectifier diodes n suited for smps n very low forward losses n negligible switching losses n high surge current capability n high avalanche energy capability n insulated : insulating voltage = 2500 v rms capacitance = 55 pf description absolute maximum ratings features dual rectifier suited for switchmode power supply and high frequency dc to dc converters. packaged in isotop tm this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. isotop (plastic) symbol parameter value unit i f(rms) rms forward current per diode 150 a i f(av) average forward current d = 0.5 tc=110c per diode 100 a i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 1600 a tstg tj storage and junction temperature range -40to+ 150 -40to+150 c c symbol parameter value unit v rrm repetitive peak reverse voltage 200 v isotop is a trademark of stmicroelectronics. k2 a2 a1 k1
byv255v 2/5 symbol test conditions min. typ. max. unit i r * t j = 25c v r =v rrm 100 m a t j = 100c 10 ma v f** t j = 125c i f = 100 a 0.85 v t j = 125c i f = 200 a 1.00 t j = 25c i f = 200 a 1.15 pulse tes t:*tp=5ms, duty cycl e<2% ** tp = 380 m s, duty cycl e<2% electrical characteristics (per diode) static characteristics symbol test conditions min. typ. max. unit trr t j = 25c i f = 0.5a i r =1a irr = 0.25a 55 ns i f =1a v r = 30v di f /dt = -50a/ m s80 tfr t j = 25c i f =1a v fr =1.1xv f tr=5ns 10 ns v fp t j = 25c i f =1a tr=5ns 1.5 v recovery characteristics symbol parameter value unit rth (j-c) junction to case per diode 0.4 c/w total 0.25 rth (c) coupling 0.1 c/w when the diodes 1 and 2 are used simultaneously : tj-tc (diode 1) = p(diode 1) x rth(j-c)(per diode) + p(diode 2) x rth(c) thermal resistance symbol test conditions min. typ. max. unit i rm t j = 100c i f = 100a lp a 0.05 m h vcc a 0.6 v rrm dif/dt = -200a/ m s16a di f /dt = -400a/ m s24 turn-off switching characteristics
byv255v 3/5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 p=100w p=70w p=40w p=20w t i m =tp/t tp i m(a) fig.2 : peak current versus form factor. tj=125 c o ifm(a) 1 10 100 1000 vfm(v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fig.3 : forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp 1.0e-03 1.0e-02 1.0e-01 1.0e+00 k fig.4 : relative variation of thermal impedance junction to case versus pulse duration. 0 20406080100120 0 10 20 30 40 50 60 70 80 90 100 110 120 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : average forward power dissipation versus average forward current. 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=rth(j-c) fig.6 : average current versus ambient temperature. (duty cycle : 0.5) 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 800 900 1000 i m(a) im t =0.5 t(s) tc=25 c o tc=110 c o tc=75 c o fig.5 : non repetitive surge peak forward current versus overload duration.
byv255v 4/5 1 10 100 200 500 550 600 650 700 750 800 vr(v) f=1mhz tj=25 c o c(pf) fig.7 : junction capacitance versus reverse voltage applied (typical values). 10 50 20 100 200 500 0.1 0.2 0.5 1 2 qrr(uc) 90%confidence if=if(av) tj=100 c o dif/dt(a/us) fig.8 : recovery charges versus di f /dt. 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 typical values qrr;irm[tj]/qrr;irm[tj=100 c o irm qrr tj( c) o fig.10 : dynamic parameters versus junction temperature. 10 20 50 100 200 500 1 5 2 10 20 50 90%confidence if=if(av) tj=100 c o dif/dt(a/us) irm(a) fig.9 : peak reverse current versus dif/dt.
byv255v 5/5 n marking : type number n cooling method : c n weight : 27 g n epoxy meets ul94, v0 package mechanical data isotop ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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